What is BU111?


This is Silicon NPN Power Transistor.

A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.


[PDF] Complete Technical Details can be found in the BU111 datasheet provided at this page.

Summary in PDF File


www DataSheet co kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU111 DESCRIPTION Collector Emitter Sustaining Voltag VCEO SUS 300V Min Low Collector Saturation Voltage VCE sat 1 5V Max IC 2 5A APPLICATIONS Designed for use in color TV receivers chopper supplies ABSOLUTE MAXIMUM RATINGS Ta 25 SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Repetitive Base Current Collector Power Dissipation TC 25 Junction Temperature Storage Temperature Range VALUE 500 300 6 6 8 3 50 200 65 200 UNIT V V V A A A W PC TJ Tstg isc Website www iscsemi cn Datasheet pdf http www DataSheet4U net www DataSheet co kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC 25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BU111 MAX UNIT VCEO SUS Collector Emitter Sustaining Voltage IC 100mA IB 0 200 V V BR EBO Emitter Base Breakdown Voltage IE 1mA IC 0 6 V VCE sat Collector Emitter Saturation Voltage IC 2 5A IB 0 5A 1 5 V VBE sat Base Emitter Saturation Voltage IC 2 5

Datasheet Download (PDF)


[ Detailed Data ]


Characteristics of NPN Transistors

1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input.

Manufacturers : Inchange Semiconductor

ISC - BU111 Datasheet PDF

ISC BU111 TRANSISTOR

Silicon NPN Power Transistor

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