What is STT13005FP?
This is High voltage fast-switching NPN power transistor. A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material. |
[PDF] Complete Technical Details can be found in the
STT13005FP datasheet
provided at this page.Summary in PDF Filewww datasheetgo.com STT13005FP High voltage fast switching NPN power transistor Preliminary data Features High voltage capability Minimum lot to lot spread for reliable operation Very high switching speed Applications Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters 3 2 1 SOT 32FP Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA The device is designed for use in lighting applications and low cost switch mode power supplies Figure 1 Internal schematic diagram Table 1 Device summary Marking T13005FP Packages SOT 32FP Packaging Bulk Order codes STT13005FP May 2009 Doc ID 15663 Rev 1 1 10 www st com 10 This is preliminary information on a new product now in development or undergoing evaluation Details are subject to change without notice Electrical ratings STT13005FP www datasheetgo.com 1 Electrical ratings Absolute maximum ratings Parameter Collector emitter voltage VBE 0 Collector emitter voltage IB 0 Emitter base voltage IC 0 |
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[ Detailed Data ] |
Characteristics of NPN Transistors1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators. 3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter. 4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source. 5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. Manufacturers : ST Microelectronics |
STM STT13005FP TRANSISTOR High voltage fast-switching NPN power transistor |
Datasheet STT13005FP PDF DownLoad ( STM ) |