What is 20N60S5?
This is SPP20N60S5. |
[PDF] Complete Technical Details can be found in the
20N60S5 datasheet
provided at this page.Summary in PDF FileCool MOS Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS on in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv dt rated Ultra low effective capacitances Improved transconductance SPP20N60S5 VDS RDS on ID 600 0 19 20 V A PG TO220 2 P TO220 3 1 123 Type SPP20N60S5 Package PG TO220 Ordering Code Q67040 S4751 Marking 20N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC 25 C TC 100 C ID Pulsed drain current tp limited by Tjmax ID puls Avalanche energy single pulse EAS ID 10 A VDD 50 V Avalanche energy repetitive tAR limited by Tjmax1 EAR ID 20 A VDD 50 V Avalanche current repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC f 1Hz VGS Power dissipation TC 25 C Operating and storage temperature Ptot Tj Tstg Value 20 13 40 690 1 20 20 30 208 55 150 Unit A mJ A V W C Rev 2 8 Page 1 2009 12 01 SPP20N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS 480 V ID 20 A Tj 125 C Thermal Characteristics Parameter Thermal resistance junction case SMD version device on PCB min footprint 6 cm2 cooling area 2 Soldering temperature wave |
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Manufacturers : Infineon Technologies  |
INFINEON 20N60S5 DATA SPP20N60S5  |
Datasheet 20N60S5 PDF DownLoad ( INFINEON ) |