What is BULD116D?
This is MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material. |
[PDF] Complete Technical Details can be found in the
BULD116D datasheet
provided at this page.Summary in PDF Filewww datasheetgo.com BULD116D MEDIUM VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR s s s s s INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH HOLE IPAK TO 251 POWER PACKAGE IN TUBE SUFFIX 1 1 3 2 APPLICATIONS s COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A C MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A C MAINS DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA The device is designed for use in lighting applications and low cost switch mode power supplies IPAK TO 251 Suffix 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector Emitter Voltage V BE 0 Collector Emitter Voltage I B 0 Emitter Base Voltage I C 0 Collector Current Collector Peak Current t p 5 ms Base Current Base Peak Current t p 5 ms Total Dissipation at T c 25 o C Storage Temperature Max Operating Junction Temperatur |
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[ Detailed Data ] |
Characteristics of NPN Transistors1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators. 3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter. 4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source. 5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. Manufacturers : STMicroelectronics |
STM BULD116D TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
Datasheet BULD116D PDF DownLoad ( STM ) |