What is IRF1010ESPBF?


This is HEXFET Power MOSFET.


[PDF] Complete Technical Details can be found in the IRF1010ESPbF datasheet provided at this page.

Summary in PDF File


PD 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low profile through hole IRF1010EL l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead Free Description l IRF1010ESPbF IRF1010ELPbF HEXFET Power MOSFET D VDSS 60V RDS on 12m G S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX 4 It provides the highest power capability and the lowest possible onresistance in any existing surface mount package The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 0W in a typical surface mount application The through hole version IRF1010EL is available for lowprofile applications ID 84A www datasheetgo.com D2Pak IRF1010ES TO 262 IRF1010EL Absolute Maximum Ratings Parameter ID TC 25 C ID TC 100

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Manufacturers : International Rectifier

IR - IRF1010ESPBF Datasheet PDF

IR IRF1010ESPbF MOSFET

HEXFET Power MOSFET

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