What is BULB128-1?


This is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.

A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.


[PDF] Complete Technical Details can be found in the BULB128-1 datasheet provided at this page.

Summary in PDF File


www datasheetgo.com BULB128 1 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR Ordering Code BULB128 1 s Marking BULB128 Shipment Tube s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH HOLE I2PAK TO 262 POWER PACKAGE IN TUBE SUFFIX 1 3 12 APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA The device is designed for use in lighting applications and low cost switch mode power supplies I2PAK TO 262 Suffix 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector Emitter Voltage V BE 0 Collector Emitter Voltage I B 0 Emitter Base Voltage I C 0 Collector Current Collector Peak Current t p 5 ms Base Current Base Peak Current t p 5 ms Total Dissipation at T c 25 o C Storage Temperature Max Operating Junction

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BULB128-1


[ Detailed Data ]


Characteristics of NPN Transistors

1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input.

Manufacturers : ST Microelectronics

STM - BULB128-1 Datasheet PDF

STM BULB128-1 TRANSISTOR

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


Datasheet BULB128-1 PDF DownLoad ( STM )