What is IRGP4055DPBF?

This is PDP TRENCH IGBT.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance). They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

[PDF] Complete Technical Details can be found in the IRGP4055DPBF datasheet provided at this page.

Datasheet Summary in PDF File

www datasheetgo.com PD 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on and Energy per Pulse EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGP4055DPbF Key Parameters 300 1 70 270 150 V V A C VCE min VCE ON typ 110A IRP max TC 25 C c TJ max C C G E C G E n channel G Gate C Collector TO 247AC E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels This device utilizes advanced trench IGBT technology to achieve low VCE on and low EPULSETM rating per silicon area which improve panel efficiency Additional features are 150 C operating junction temperature and high repetitive peak current capability These features combine to make this IGBT a highly efficient robust and reliable device for PDP applications Absolute Maximum Ratings Parameter VGE IC TC 25 C IC TC 100 C IRP TC 25 C PD TC 25 C PD TC 100 C TJ TSTG Gate to Emitter Voltage Continuous Collector Current VGE 15V Continuous Collector VGE 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and St

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[ Detailed Data ]

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : International Rectifier

IR IRGP4055DPBF IGBT

PDP TRENCH IGBT

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Datasheet IRGP4055DPBF.PDF DownLoad ( IR )

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