What is IDT10S60C?

This is 2nd Generation thinQ SiC Schottky Diode.

The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection. The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high-

[PDF] Complete Technical Details can be found in the IDT10S60C datasheet provided at this page.

Datasheet Summary in PDF File

www datasheetgo.com IDT10S60C 2nd Generation thinQ TM SiC Schottky Diode Features Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No forward recovery No temperature influence on the switching behavior High surge current capability Pb free lead plating RoHs compliant Qualified according to JEDEC1 for target applications Breakdown voltage tested at 5mA2 Product Summary V DC Qc IF 600 24 10 V nC A PG TO220 2 2 thinQ 2G Diode specially designed for fast switching applications like CCM PFC Motor Drives Type IDT10S60C Package PG TO220 2 2 Marking I F 5 A T j 25 C D10S60C Pin 1 C Pin 2 A Maximum ratings at T j 25 C unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F RMS T C 140 C f 50 Hz T C 25 C t p 10 ms T j 150 C T C 100 C D 0 1 T C 25 C t p 10 s T C 25 C t p 10 ms Value 10 15 84 Unit A Surge non repetitive forward current I F SM sine halfwave Repetitive peak forward current Non repetitive peak forward current i t value Repetitive peak reverse voltage Diode ruggedness dv dt Power dissipation Operating and storage temperature Mounting torque Rev 2 0 I F RM I F max i 2d

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[ Detailed Data ]

SBDs are commonly used in power supplies, voltage regulators, and DC-DC converters, as well as in high-frequency applications such as mixers and detectors in radio and microwave circuits.

Manufacturers : Infineon Technologies

INFINEON - IDT10S60C Datasheet PDF


2nd Generation thinQ SiC Schottky Diode

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Datasheet IDT10S60C.PDF DownLoad ( INFINEON )

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