What is FGA180N30D?

This is 300V PDP IGBT.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance). They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

[PDF] Complete Technical Details can be found in the FGA180N30D datasheet provided at this page.

Datasheet Summary in PDF File

www datasheetgo.com FGA180N30D 300V PDP IGBT June 2006 FGA180N30D 300V PDP IGBT Features High Current Capability Low saturation voltage VCE sat Typ 1 1 V IC 40A High Input Impedance Description Employing Unified IGBT Technology FGA180N30D provides low conduction and switching loss FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential C G TO 3P G C E E Absolute Maximum Rating TC 25oC unless otherwise noted Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Notes Description Collector Emitter Voltage Gate Emitter Voltage Collector Current Pulsed Collector Current Note 1 FGA180N30D 300 30 TC 25 C TC 25 C TC 100 C TC 25 C TC 100 C 180 450 10 40 480 192 55 to 150 300 300 Units V V A A A A W W C C C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp for soldering Purposes 1 8 from case for 5 seconds 1 Repetitive test pulse width 100usec Duty 0 5 Ic_pulse limited by max Tj Thermal Characteristics Symbol R JC R JC R JA Parameter Thermal Resistance Junction to Case for IGBT Thermal Resistance Jun

Datasheet Download (PDF)

[ Detailed Data ]

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : Fairchild Semiconductor

FAIRCHILD FGA180N30D IGBT

300V PDP IGBT

More Search

Datasheet FGA180N30D.PDF DownLoad ( FAIRCHILD )

[ Home ]

| Related Part Number

Although each manufacturer has the same part name, the detailed parameters of its function may differ slightly. Therefore, it is important to check accurate data from various manufacturers.

Electronic Components Distributor

DataSheetGo.com offers a broad range of information on various semiconductors, including their specifications, features, applications, and pricing, among others.

With the rapid development and evolution of semiconductor technology, it is essential to have an accurate and reliable source of information. DataSheetGo.com ensures that its users have access to the most up-to-date information available.

This site is user-friendly, with an easy-to-use interface that allows users to navigate seamlessly through the site. Its search function is powerful, enabling users to find the specific information they need quickly and easily.

Related keywords to FGA180N30D include schematic, equivalent, circuit, and replacement

New | Datasheet Search

Privacy Policy | Contact Us Sitemaps

DataSheetGO.com | @ 2022