What is 20J321?
This is GT20J321. |
[PDF] Complete Technical Details can be found in the
20J321 datasheet
provided at this page.Summary in PDF Filewww datasheetgo.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement mode Fast switching FS Operating frequency up to 50 kHz reference Low switching loss Eon 0 40 mJ typ Eoff 0 43 mJ typ Low saturation voltage VCE sat 2 0 V typ FRD included between emitter and collector Unit mm www datasheetgo.com High speed tf 0 04 s typ Maximum Ratings Ta 25 C Characteristics Collector emitter voltage Gate emitter voltage Collector current Emitter collector forward current Collector power dissipation Tc 25 C Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 20 20 40 20 40 45 150 55 to 150 Unit V V A JEDEC JEITA TOSHIBA 2 10R1C A W C C Weight 1 7 g typ Thermal Characteristics Characteristics Thermal resistance IGBT Thermal resistance diode Symbol Rth j c Rth j c Max 2 78 4 23 Unit C W C W ww datasheetgo.com Equivalent Circuit Collector Gate Emitter 1 www datasheetgo.com 2002 04 08 www DataSheet4U www datasheetgo.com 4U com DataSheet 4 U com www datasheetgo.com www DataSh |
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Manufacturers : TOSHIBA  |
TOSHIBA 20J321 DATA GT20J321  |
Datasheet 20J321 PDF DownLoad ( TOSHIBA ) |