What is NE25139T1U71?


This is GENERAL PURPOSE DUAL-GATE GaAS MESFET.


[PDF] Complete Technical Details can be found in the NE25139T1U71 datasheet provided at this page.

Summary in PDF File


GENERAL PURPOSE DUAL GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS 0 02 pF TYP HIGH GPS 20 dB TYP AT 900 MHz LOW NF 1 1 dB TYP AT 900 MHz LG1 1 0 m LG2 1 5 m WG 400 m ION IMPLANTATION AVAILABLE IN TAPE REEL OR BULK Power Gain GPS dB 20 NE25139 POWER GAIN AND NOISE FIGURE vs DRAIN TO SOURCE VOLTAGE GPS 10 VG2S 1 V VG2S 0 5 V VG2S 2 V 10 ID 10 mA f 900 MHz 5 NF 0 0 5 10 0 DESCRIPTION The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer AGC amplifier or low noise amplifier As an example by shorting the second gate to the source higher gain can be realized than with single gate MESFETs This device is available in a mini mold surface mount package Drain to Source Voltage VDS V ELECTRICAL CHARACTERISTICS TA 25 C PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S OFF VG2S OFF IG1SS IG2SS YFS CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS 5 V VG2S 1 V ID 10 mA f 900 MHz Power Gain at VDS 5 V VG2S 1 V ID 10 mA f 900 MHz Drain to Source Breakdown Voltage at VG1S 4 V VG2S 0 ID 10 A Saturated Drain Current at VDS 5 V VG2S 0 V VG1S 0 V Gate 1 to S

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Manufacturers : NEC

NEC - NE25139T1U71 Datasheet PDF

NEC NE25139T1U71 GATE

GENERAL PURPOSE DUAL-GATE GaAS MESFET

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