What is MC-4R256FKE6D?


This is Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT).


[PDF] Complete Technical Details can be found in the MC-4R256FKE6D datasheet provided at this page.

Summary in PDF File


DATA SHEET MOS INTEGRATED CIRCUIT MC 4R256FKE6D Direct Rambus DRAM RIMMTM Module 256M BYTE 128M WORD x 16 BIT Description The Direct Rambus RIMM module is a general purpose high performance memory module subsystem suitable for use in a broad range of applications including computer memory personal computers workstations and other applications where high bandwidth and low latency are required MC 4R256FKE6D modules consists of eight 288M Direct Rambus DRAM Direct RDRAM devices PD488588 These are extremely high speed CMOS DRAMs organized as 16M words by 18 bits The use of Rambus Signaling Level RSL technology permits 600MHz 711MHz or 800MHz transfer rates while using conventional system and board design technologies Direct RDRAM devices are capable of sustained data transfers at 1 25 ns per two bytes 10 ns per sixteen bytes The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple simultaneous randomly addressed memory transactions The separate control and data buses with independent row and column control yield over 95 bus efficiency The Direct RDRAM s 32 banks support up to four simultaneous transactions per device Features 184 edge connector pads with 1mm pad spacing 256 MB Direct RDRAM st

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Manufacturers : Elpida Memory

ELPIDA - MC-4R256FKE6D Datasheet PDF

ELPIDA MC-4R256FKE6D DATA

Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)

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