What is BU4506?
This is Silicon Diffused Power Transistor. |
[PDF] Complete Technical Details can be found in the
BU4506 datasheet
provided at this page.Summary in PDF FilePhilips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance new generation high voltage high speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector emitter voltage peak value Collector emitter voltage open base Collector current DC Collector current peak value Total power dissipation Collector emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE 0 V TYP 3 0 300 MAX 1500 800 5 8 45 3 0 450 UNIT V V A A W V A ns Ths 25 C IC 3 A IB 0 75 A f 16 kHz ICsat 3 0 A f 16 kHz PINNING SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System IEC 134 SYMBOL VCESM VCEO IC ICM IB IBM IBM Ptot Tstg Tj PARAMETER Collector emitter voltage peak value Collector emitter voltage open base Collector c |
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[ Detailed Data ] |
Manufacturers : NXP Semiconductors  |
NXP BU4506 TRANSISTOR Silicon Diffused Power Transistor |
Datasheet BU4506 PDF DownLoad ( NXP ) |