What is BU2508A?
This is Silicon Diffused Power Transistor. |
[PDF] Complete Technical Details can be found in the
BU2508A datasheet
provided at this page.Summary in PDF FilePhilips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance new generation high voltage high speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat tf PARAMETER Collector emitter voltage peak value Collector emitter voltage open base Collector current DC Collector current peak value Total power dissipation Collector emitter saturation voltage Collector emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE 0 V TYP 4 5 0 4 MAX 1500 700 8 15 125 1 0 5 0 0 6 UNIT V V A A W V V A s Tmb 25 C IC 4 5 A IB 1 29 A IC 4 5 A IB 1 1 A ICM 4 5 A IB end 1 1 A PINNING SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System IEC 134 SYMBOL VCESM VCEO IC ICM IB IBM IB AV IBM Ptot Tstg Tj PARAMETER Collector emitter vol |
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Manufacturers : NXP Semiconductors  |
NXP BU2508A TRANSISTOR Silicon Diffused Power Transistor |
Datasheet BU2508A PDF DownLoad ( NXP ) |