What is IRF1310NS?


This is Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A).


[PDF] Complete Technical Details can be found in the IRF1310NS datasheet provided at this page.

Summary in PDF File


PD 91514B IRF1310NS L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1310NS Low profile through hole IRF1310NL 175 C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS 100V G S RDS on 0 036 ID 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX 4 It provides the highest power capability and the lowest possible onresistance in any existing surface mount package The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 0W in a typical surface mount application The through hole version IRF1310NL is available for lowprofile applications D 2 P ak T O 26 2 Absolute Maximum Ratings Parameter ID TC 25 C ID TC 100 C IDM PD TA 25 C PD TC 25 C VGS EAS IAR EAR dv dt TJ TSTG

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Manufacturers : International Rectifier

IR - IRF1310NS Datasheet PDF

IR IRF1310NS MOSFET

Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)

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