What is MBR3045CT?
This is Schottky Barrier Rectifier, Diode.
The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection. The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high-
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INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR3045CT FEATURES Dual Rectifier Conduction Positive Center Tap Low Power Loss High Efficiency High Current Capability Low Forward Voltage Drop High Surge Capacity Guarding for Overvoltage protection For Use in Low Voltage High Frequency Inverters Free Wheeling and Polarity Protection Applications MECHANICAL CHARACTERISTICS Case Epoxy Molded Finish All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable High Temperature Soldering Guaranteed 250 Max for 10 Seconds ABSOLUTE MAXIMUM RATINGS Ta 25 SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF AV IFSM IRRM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current Per Leg Total Nonrepetitive Peak Surge Current 8 3ms single half sine wave superimposed on rated load conditions Peak Repetitive Reverse Surge Current 2 S 1Khz 45 15 30 250 2 V A A A TJ Ju
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[ Detailed Data ]
SBDs are commonly used in power supplies, voltage regulators, and DC-DC converters, as well as in high-frequency applications such as mixers and detectors in radio and microwave circuits.
Manufacturers : Inchange Semiconductor
ISC MBR3045CT RECTIFIER
Schottky Barrier Rectifier, Diode
Datasheet MBR3045CT.PDF DownLoad ( ISC )
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