K3918 PDF Datasheet – 2SK3918, 25V, MOSFET

Part number : K3918, 2SK3918

Functions : 25V, N-Channel MOSFET

Package : TO-251, TO-252 Type

Manufacturer : NEC

Image :

K3918 Datasheet PDF

Description :

The K3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier

The texts in the PDF file :

FEATURES • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low Ciss: Ciss = 1300 pF TYP. • 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±48 ±192 29 1.0 150 −55 to +150 22 48 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17077EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SK3918 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 12 A VGS = 10 V, ID = 24 A VGS = 5. [ … ]

Pinouts :

K3918 pinout nec

K3918 PDF File

K3918 pdf