K3878 PDF – 900V, N-ch MOSFET – Toshiba

Part number : K3878

Functions : Field Effect Transistor

Package information : TO-3P type

Manufacturer : Toshiba

Image

k3878-mosfet


Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

K3878 schematic
Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 900 V

2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 9, Pulse : IDP = 27 A

5. Drain power dissipation (Tc = 25°C) : PD = 150 W

6. Single pulse avalanche energy : EAS = 778 mJ

7. Avalanche current : IAR = 9 A

8. Repetitive avalanche energy : EAR = 15 mJ

Pinout :
K3878 datasheet pinout

K3878 Datasheet PDF

K3878 pdf

 

Other data sheets within the file : 2SK3878