Part number : K3569, 2SK3569
Functions : Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Package : SC-67, TO-220 type
Manufacturer : Toshiba
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Switching Regulator Applications
1. Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)
2. High forward transfer admittance: |Yfs| = 8.5S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta =25°C)
1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 10 A
5. Drain power dissipation (Tc =25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 363 mJ
7. Avalanche current : IAR = 10 A
