Part number : K10A60D
Functions : Silicon N Channel MOSFET Type
Manufacturer : Toshiba
Image :
Functions :
Switching Regulator Applications
1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K10A60D Pinout
Electrical Characteristics (Ta =25°C)
K10A60D Datasheet PDF
Other data sheets within the file : K10A60 , K10A60D, TK10A60D
