IRF540N Datasheet – 100V, 33A, HEXFET MOSFET

IRF540N is an N-channel MOSFET (metal oxide semiconductor field effect transistor), widely used in high voltage and high current applications, such as power switches and amplifier circuits.

Part number : IRF540N

Functions : 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Package information :  TO-220AB Type

Manufacturer : International Rectifier

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IRF540N MOSFET Transistor

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

1. High voltage tolerance: Allows high voltage up to 100V.

2. High current handling ability: It has a high current handling ability of up to 33A. This can handle large currents, such as in power switches or amplifier circuits.

3. Low gate voltage requirement: The gate voltage requirement is relatively low, which has the advantage of making it easy to configure the gate drive circuit.

4. Resistance Channel: Features a low resistance channel (On-Resistance). This reduces power losses and enables efficient power transfer.

Pinout

IRF540N pinout datasheet

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

 

IRF540N Datasheet PDF

 

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