IRF540N is an N-channel MOSFET (metal oxide semiconductor field effect transistor), widely used in high voltage and high current applications, such as power switches and amplifier circuits.
Part number : IRF540N
Functions : 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
Package information : TO-220AB Type
Manufacturer : International Rectifier
Image
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
1. High voltage tolerance: Allows high voltage up to 100V.
2. High current handling ability: It has a high current handling ability of up to 33A. This can handle large currents, such as in power switches or amplifier circuits.
3. Low gate voltage requirement: The gate voltage requirement is relatively low, which has the advantage of making it easy to configure the gate drive circuit.
4. Resistance Channel: Features a low resistance channel (On-Resistance). This reduces power losses and enables efficient power transfer.
Pinout
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
IRF540N Datasheet PDF
Related articles across the web
Information related to components
Mosfet IRF540N - - Fairchild |
Mosfet IRF540N - 33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET - Intersil |
Mosfet IRF540 - Vishay Learn More | PDF |
Mosfet RF1S540 - N-Channel Power MOSFETs - Harris - PDF
|