HY1606 Datasheet – N-Ch MOSFET Transistor

Part number : HY1606, HY1606P, HY1606B, HY 1606

Function : N-Channel Enhancement  Mode MOSFET

Package : TO-220FB-3L,  TO-263-2L Pin Type

Manufacturer : Hooyi Semiconductor


HY1606 mosfet transistor


HY 1606 is a kind of transistor.

1. 60V/66A, RDS(ON)= mW (typ .) @ VGS=10V
2. Reliable and Rugged
3. Lead Free and Green Devices Available (RoHSCompliant)



HY1606 pinout datasheet



1. Switching application
2. Power Management for Inverter Systems


Absolute Maximum Ratings

1. Drain-Source Voltage : Vdss = 60 V
2. Gate-Source Voltage : Vgss = +- 25 V
3. Maximum Junction Temperature : Tj = 175 ‘C


HY1606 Datasheet



F6N80 – 800V N-Channel MOSFET

Part number : F6N80, 6N80, FQPF6N80

Function : 800V N-Channel MOSFET

Package : TO-220F Type

Manufacturer : Fairchild Semiconductor


6N80 800V MOSFET


These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.


F6N80 pinout datasheet


1. 3.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
2. Low gate charge ( typical 31 nC)
3. Low Crss ( typical 14 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability


F6N80 Datasheet