Part number : A1972
Functions : 2SA1972, This is Semiconductor.
Manufacturer : Toshiba Semiconductor
The texts in the PDF file :
www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC TO-92MOD JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 2SA1972 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 μs Switching time Part No. IB2 Test Condition VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = [ … ]