SSS7N60B – 600V, N-Ch, MOSFET (Transistor)

This is a kind of transistor. SSS7N60B Datasheet PDF learn more.

Part number : SSS7N60B

Functions : 600V N-Channel MOSFET.

Package information : TO-220 Type, TO-220F Type

Manufacturer : Fairchild Semiconductor

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SSS7N60B Datasheet PDF

The texts in the PDF file :

SSP7N60B / SSS7N60B, SSP7N60B / SSS7N60B

600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Pin arrangement : 1. G, 2. D, 3. S

Features

7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage – Continuous (TC = 25°C) Drain Current – Continuous (TC = 100°C) Drain Current – Pulsed (Note 1) SSP7N60B 600 7.0 4.4 28 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS7N60B 7.0 * 4.4 * 28 * 420 7.0 14.7 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) – Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8″ from case for 5 seconds 147 1.18 -55 to +150 300 48 0.38 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. SSP7N60B 0.85 0.5 62.5 SSS7N60B 2.6 -62.5 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 SSP7N60B/SSS7N60B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted [ … ]

SSS7N60B PDF File