ND2410L – (ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors

ND2410L Information is available here.

Part Number : ND2410L

Function : This is a kind of semiconductor, (ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors.

Pinouts :

Package :

Manufacturer : ETC

Image :

ND2410L data sheet

Some text files in PDF file :

ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2406L ND2410L BSS129 230 V(BR)DSV Min (V) 240 rDS(on) Max (W) 6 10 20 VGS(off) (V) –1.5 to –4.5 –0.5 to –2.5 –0.7 (min) ID (A) 0.23 0.18 0.15

Features

D D D D D High Breakdown Voltage: 260 V Normally “On” Low rDS Switch: 3.5 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance TO-226AA (TO-92) 1 Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-92-18CD (TO-18 Lead Form) 1 S S G 2 D 2 D 3 Top View ND2406L ND2410L G 3 Top View BSS129 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2406L 240 “30 0.23 0.14 0.9 0.8 0.32 156 ND2410L 240 “30 0.18 0.12 0.9 0.8 0.32 156 –55 to 150 BSS129 230 “20 0.15 Unit V A 0.6 1.0 0.4 125 W _C/W _C Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426—Rev. C, 14-Apr-97 1 ND2406L/2410L, BSS129 Specificationsa Limits ND2406L ND2410L BSS129 Parameter Static Symbol Test Conditions Typb Min Max Min Max Min Max Unit VGS = –9 V, ID = 10 mA Drain-Source D i S Breakdown Voltage g V(BR)DSV VGS = –5 V, ID = 10 mA VGS = –3 V, ID = 250 mA VDS = 5 V, ID = 10 mA Gate Source [ … ]

ND2410L PDF File


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