IRFIZ24N – Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A)

IRFIZ24N Datasheet PDF learn more.

Part number : IRFIZ24N

Functions : This is a kind of semiconductor, Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A).

Pin arrangement :

Package information :

Manufacturer : International Rectifier

Image :

IRFIZ24N Datasheet PDF

The texts in the PDF file :

PD – 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated


l l D VDSS = 55V G S RDS(on) = 0.07Ω ID = 14A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚† Avalanche Current† Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. 14 10 68 29 0.19 ± 20 71 10 2.9 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max. 5.2 65 Units °C/W 8/25/97 IRFIZ24N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VG [ … ]


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