FZ800R12KS4 Datasheet PDF learn more.
Part number : FZ800R12KS4
Functions : This is a kind of semiconductor, IGBT-Module.
Pin arrangement :
Package information :
Manufacturer : eupec GmbH
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Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 80°C TC = 25 °C tP = 1 ms, TC = 80°C VCES 1200 V IC,nom. IC ICRM 800 1200 1600 A A A Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t – value, Diode Isolations-Prüfspannung insulation test voltage TC=25°C, Transistor Ptot 6,9 kW VGES +/- 20V V IF 800 A tP = 1 ms IFRM 1600 A VR = 0V, tp = 10ms, TVj = 125°C 2 It 185.000 A2s RMS, f = 50 Hz, t = 1 min. VISOL 2.500 V Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannunggate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800 A, VGE = 15V, Tvj = 25°C IC = 800 A, VGE = 15V, Tvj = 125°C IC = 32 mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min. 4,5 typ. 3,00 3,60 5,5 max. 6,5 V V V f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies – 52 – nF f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres – t.b.d. – nF VGE = -15V … + 15V, VCE = 600V VCE = 1200V, VGE = 0V, Tvj = 25°C VCE = 1200V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C QG ICES – 8,4 t.b.d. t.b.d. – 400 µC µA mA nA IGES – prepared by: R. Jörke approved by: Jens Thurau date of publication : 2000-06-14 revis [ … ]
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