APM1110K – N-Channel Enhancement Mode MOSFET

APM1110K Datasheet PDF learn more.

Part number : APM1110K

Functions : This is a kind of semiconductor, N-Channel Enhancement Mode MOSFET.

Pin arrangement :

Package information :

Manufacturer : Sinopower

Image :

APM1110K Datasheet PDF

The texts in the PDF file :



· 100V/2.7A, RDS(ON)=140mW (typ.) @ VGS=10V RDS(ON)=185mW (typ.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in TV Inverter. ® N-Channel Enhancement Mode MOSFET Pin Configuration DD DD S S S G Top View of SOP-8 (8, 7, 6, 5) DDDD (4) G Ordering and Marking Information SSS (1, 2, 3) N-Channel MOSFET APM1110 Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G: Halogen and Lead Free Device APM1110 K: APM1110 XXXXX XXXXX – Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 – June, 2014 1 www.sinopowersemi.com APM1110K ® Absolute Maximum Ratings Symbol Parameter Rating Unit VDSS VGSS Drain-Source Voltage Gate-Source Voltage 100 V ±20 IDa Continuous Drain Current (VGS=10V) TA=25°C TA=70°C ID a M 300ms Pulsed Drain Current (VGS=10V) I a S Diode Continuous Forward Current EASb Avalanche Energy, Single Pulsed (L=0.3mH) 2.7 2.1 A 10 2 25 mJ TJ TSTG Maximum Junction Temperature Storage Temperature Range 150 -55 to 150 °C PDa Maximum [ … ]

APM1110K PDF File

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