60R360P Datasheet PDF learn more.
Part number : 60R360P
Functions : This is a kind of semiconductor, MMP60R360P.
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Manufacturer : MagnaChip
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MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET
Description
MMP60R360P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.36 3 11 28 Unit V Ω V A nC Package & Internal Circuit D G DS G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters Ordering Information Order Code MMP60R360PTH Marking 60R360P Temp. Range -55 ~ 150℃ Package TO-220 Packing Tube RoHS Status Halogen Free Jun. 2013 Revision 1.1 1 MagnaChip Semiconductor Ltd. MMP60R360P Datasheet Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single – pulse avalanche energy MOSFET dv/dt ruggedness Symbol VDSS VGSS ID IDM PD EAS dv/dt Rating 600 ±30 11 6.95 33 83 220 50 Unit V V A A A W mJ V/ns Note TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS dv/dt Tstg Tj 15 -55 ~150 150 V/ns ℃ ℃ Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 1.5 62.5 Unit ℃/W ℃/W Jun. 2013 Revision 1.1 2 MagnaChip Semiconductor Ltd. MMP60R360P Datasheet Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source [ … ]
60R360P PDF File
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