Part number : 30F124, GT30F124
Functions : Discrete IGBT – 300V, 200A
Package information : TO-220SIS Type
Manufacturer : Toshiba
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Description
30F124 is a 300V, 200A IGBT (Insulated Gate Bipolar Transistor). IGBT is a semiconductor device widely used in power conversion and control applications.
IGBT combines the characteristics of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and BJT (Bipolar Junction Transistor) and has the ability to handle high voltage and high current. Due to these characteristics, IGBTs are recognized as a major device used for highly efficient power conversion.
IGBTs are used in a variety of applications. For example, it can be applied to high-voltage DC-AC inverters, Uninterruptible Power Supply (UPS), power electronics, driving mechanisms, railway power systems, etc. In the automotive industry, they are also used for power conversion and motor control in electric vehicles.
Features of the Toshiba Discrete IGBTs
The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
30F124 is 300V, 200A, IGBT
Ordering Informations
Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability.
Pinout
Application
1. Plasma display panels
30F124 Datasheet PDF Download
Other data sheets within the file : 3OF124, GT30F124, GT3OF124
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