2N7000 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This transistor commonly used in power switches or signal strengthening fields.
Part number : 2N7000
Functions : 60V, N-Channel MOSFET
Package information : TO-92 Type
Manufacturer : Vishay, NTE, Philps, Microchips
The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
N-channel MOSFET consists of three pins: Gate, Drain, and Source. The gate pin controls the gate voltage to adjust the charge of the channel. The drain pin is connected to the side from which current flows, and the source pin is connected to the side from which current comes.
2N7000 is a transistor suitable for low-voltage and low-current circuits, where the input voltage is relatively low and the current is small. For example, it is used to control a power switch using the digital output signal of a microcontroller.
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and High Gain
1. Low Offset Voltage
2. Low-Voltage Operation
3. Easily Driven Without Buffer
4. High-Speed Circuits
5. Low Error Voltage
• Motor Controls
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps )
Useful External Link
2N7000 PDF Datasheet
Information related to components
| 2N7000 - - Motorola |
|Transistor 2N7000 - N-channel enhancement mode vertical D-MOS transistor - Nxp |
| 2N7000 - Motorola |
Learn More | PDF