A2SHB Datasheet – 20V, 2.5A, MOSFET, SOT-23

This is a type of MOSFET semiconductor device that has two N-channel MOSFETs integrated into a single package.

Marking Code: A2SHB

Part Number: KI2302DS, SI2302, HM2302A

Function: 20V, 2.5A, N-channel enhancement mode MOSFET

Package: SOT-23 Type

Manufacturers: Microdiode Electronics, Shenzhen Huazhimei

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A2SHB datasheet mosfet

Description

A2SHB MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a switching device widely used in electronic circuits. MOSFET controls the current flow between the source and drain by applying voltage to the gate.

Key Characteristics

1. Rated voltage (Vds): 20 V. The maximum drain-to-source voltage that the MOSFET can withstand.

2. Rated current (Id): 2.5 A. The maximum drain current that can flow through the MOSFET.

Pinouts

A2SHB pinout

Features

1. Low Rds(on): Low on-resistance is important for minimizing power loss and increasing efficiency.

2. Fast switching speed: High-speed switching capability is a very important characteristic in switching power devices.

3. Package type: It is likely to be available in a small package such as SOT-23.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20V

2. Gate to source voltage : VGSS = ± 8V

3. Drain current : ID = 2.5 A

4. Drain power dissipation : PD = 1.25 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications

1. DC-DC converters: Used for efficient power conversion.

2. Motor drivers: Speed ​​and direction control of small motors.

3. Logic level shifters: Signal conversion between different voltage levels.

4. Switching power supplies: Power conversion through high-speed switching.

Other data sheets within the file:

DO2302C, SI2302B, SLS2302, YFW2302, HM2302F, DO2302F, LMTL2N02

 

A2SHB Datasheet PDF

A2SHB

ELM14800AA Datasheet – 30V, Dual N-Channel MOSFET

ELM14800AA is a type of MOSFET semiconductor device that has two N-channel MOSFETs integrated into a single package.

Marking Code: 14800AA

Function: 30V Dual N-channel enhancement mode MOSFET

Package: SO-8 Pin Type

Manufacturers: VSsemi ( www.vbsemi.tw), ELM Technology

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ELM14800AA datasheet pdf

 

Description

ELM14800AA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch.

Pinouts

ELM14800AA pinout

Features

1. Halogen-free According to IEC 61249-2-21 Definition

2. TrenchFET® Power MOSFET

3. 100 % UIS Tested

4. 100 % Rg Tested

5. Compliant to RoHS Directive 2002/95/EC

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30V

2. Gate to source voltage : VGSS = ± 20V

3. Drain current : ID = 6.8 A

4. Drain power dissipation : PD = 2.7 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications

1. Set Top Box

2. Low Current DC/DC

Other data sheets within the file :

 

ELM14800AA Datasheet PDF

ELM14800AA