15N03GH Datasheet PDF learn more.
Part number : 15N03GH, AP15N03GH
Functions : This is a kind of semiconductor, 30V, 15A, Power MOSFET.
Pin arrangement : 1. Gate 2. Drain 3. Source
Package information : TO-252(H), TO-251(J) type
Manufacturer : Advanced Power Electronics
Image :
The texts in the PDF file :
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version
(AP15N03GJ) is available for low-profile applications.
▼ Low Gate Charge BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 80mΩ
▼ Fast Switching
AP15N03GH/J Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 ` – Typ. 0.037 Max. Units 80 100 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=18A 16 4.6 1.1 3 4.9 22.5 12.2 3.3 160 107 32 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=8A VDS=24 [ … ]